Cs150n03 Mosfet

Posted : admin | On 30-04-2021

Silicon N-Channel Power MOSFET General Description： CS130N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Type Designator: CS150

Type of Transistor: MOSFET

Cheap Motor Controller, Buy Quality Home Improvement Directly from China Suppliers:12pcs/lot CS150N04A8 TO 220AB CS150N04 A8 N CHANNEL ENHANCEMENT MODE POWER MOSFET CS 150N04A8 CS150N04 A8 CS150N 04A8 CS150 N04A Enjoy Free.
MOSFET Single N-Channel Power MOSFET 40 V, 150 A, 2.0mO Power MOSFET 40 V, 2.0 mO, 150 A, Single N-Channel Enlarge Mfr. Part # NTMFS5C423NLT1G. Mouser Part # 863-NTMFS5C423NLT1G. ON Semiconductor: MOSFET Single N-Channel Power MOSFET 40 V, 150 A, 2.0mO Power MOSFET 40 V, 2.0 mO, 150 A, Single N-Channel.

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO-257

CS150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS150 Datasheet (PDF)

0.1. cs150n03 a8.pdf Size:390K _crhj

Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

0.2. cs150n04 a8.pdf Size:169K _crhj

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

0.3. cs150.pdf Size:125K _china

CS150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 38 A ID VGS=10V,TC=100 24 A IDM 152 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 RDS on

0.4. cs150n04a8.pdf Size:200K _wuxi_china

0.5. cs150n03a8.pdf Size:1281K _wuxi_china

Datasheet: CS12N65A8H, CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A, IRFP150N, CS150N03A8, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H.

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Last Update

Número de Parte: CS150N03_A8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente |Vds|: 30 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 150 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 940 pF

Resistencia drenaje-fuente RDS(on): 0.0035 Ohm

Empaquetado / Estuche: TO220AB

CS150N03_A8 Datasheet (PDF)

0.1. cs150n03 a8.pdf Size:390K _crhj

6.1. cs150n03a8.pdf Size:1281K _wuxi_china

7.1. cs150n04 a8.pdf Size:169K _crhj

Cs150n03 Mosfet Switch

7.2. cs150n04a8.pdf Size:200K _wuxi_china

Otros transistores... CS12N65F_A9R, CS12N70_A8H, CS13N50_A8D, CS13N50_A8H, CS13N50_A8R, CS13N50F_A9D, CS13N50F_A9H, CS13N50F_A9R, 2SK2837, CS150N04_A8, CS15N50_A8R, CS15N50F_A9R, CS16N60_A8H, CS16N60F_A9H, CS19N40_A8H, CS19N40_AN, CS1N50_A1.

Cs150n03 Mosfet Motor

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